Abstract
A systematic study of the optical properties of strained InxGa1−xAs/AlyGa1−yAs (x=0.16, y=0.33) single quantum-well structures grown by molecular-beam epitaxy is presented. An optimized growth procedure is shown to produce quantum-well structures exhibiting 2 K photoluminescence linewidths as low as 2.6 meV, very close to those observed for corresponding InxGa1−xAs/GaAs control structures.
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