Abstract

Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiation-hardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices’ total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.

Highlights

  • Power MOSFETs are widely applied in space power systems [1]

  • There has been a substantial research on such radiation effects [4,5,6,7], whereas radiation hardening on power MOSFETs, the more necessary resolve, has only been discussed in a few articles [8,9,10,11,12] whose content mostly focused on a single hardening issue, such as single event burnout (SEB), single event gate rupture (SEGR), and total ionizing dose (TID)

  • TID- and single event effects (SEE)-hardened power MOSFETs were designed on account of the trade-offs mentioned doping concentration

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Summary

Introduction

There has been a substantial research on such radiation effects [4,5,6,7], whereas radiation hardening on power MOSFETs, the more necessary resolve, has only been discussed in a few articles [8,9,10,11,12] whose content mostly focused on a single hardening issue, such as SEB, SEGR, and TID These radiation effects, along with electrical performance, are essential considerations during the design and fabrication stage of a power MOSFET; many trade-offs should be decided when balancing between several electrical parameters and radiation survivability. Experimental verifications conducted show excellent radiation hardness and acceptable electrical performance of such devices for space power systems

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