Abstract
Grain boundaries in organic thin film have been controlled by engineering the different growth conditions in such a way that it reduces the contact resistance and enhances the carrier mobility in p-type copper phthalocyanine and n-type copper hexadecafluoro phthalocyanine based organic thin film transistors. Reduced effect of grain boundary has been demonstrated by temperature dependence of charge carrier mobility and other transport parameters. A correlation has been established between contact resistance and certain thin film morphology, achieved by varying different growth conditions.
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