Abstract
We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP power. Transistor slope declines considerably with an increase in RF power: it is the greatest at minimum power RF = 1 W. In the beginning of growth even at a low RF power (3 W) the transistor structure becomes completely inoperable. Dielectric deposition for HEMT passivation should be started at minimum RF power. We have developed an AlGaN/GaN microwave HEMT passivation process providing for conformal films and low closed transistor drain–source currents without compromise in open state transistor performance: within 15 and 100 mA, respectively, for a 1.25 and 5 mm common T-gate (Ug = –8 V and Ud-s = 50 V).
Highlights
In present study is considered the influence of the regimes of passivating dielectric silicon nitride SiNx films deposition by the chemical vapor deposition in an inductively coupled plasma (ICP CVD) on the parameters of the high electron mobility transistors (HEMT) based on AlGaN/GaN heterostructures
That the deposition process of dielectrics for the HEMT passivation must begin at the lowest possible RF power
Low damage SiNx surface passivation using remote ICP-CVD for AlGaN/GaN high electron mobility transistors (HEMT) // Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials
Summary
Рассмотрено влияние режимов нанесения пассивирующих диэлектрических пленок нитрида кремния SiNx методом плазмохимического осаждения из газовой фазы в индуктивно-связанной плазме (ICP CVD) на параметры транзисторов с высокой подвижностью электронов (HEMT) на основе гетероструктур AlGaN/GaN. Ключевые слова: нитрид кремния, плазмохимическое осаждение, ICP CVD, AlGaN/GaN HEMT, пассивация, вольт-амперные характеристики. В качестве пассивирующего слоя для AlGaN/GaN HEMT применяется широкий спектр относительно новых диэлектрических материалов (Al2O3, HfO2 и ZrO2), в основном получаемых методами атомно-слоевого осаждения, а также широко используемых в электронике диэлектрических материалов (SiOx, SiNx, SiOxNy) [11]. По сравнению с методом PECVD осаждение пленок методом ICP CVD позволяет получать качественные диэлектрические пленки Si3N4, SiO2 при низких температурах процесса [16,17,18]. Цель работы — выбор оптимального режима получения диэлектрических пленок SiNx для пассивации диодных меза-структур и T-образных затворов AlGaN/GaN HEMT, а также создания пассивных элементов монолитных интегральных схем на их основе
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