Abstract
Abstract For efficient utilization of In2O3:Sn (ITO) films in device structures, a low-temperature growth is always preferred. However, optical transparency and electrical conductivity of the transparent-conducting-oxide (TCO) films always hold a trade-off relation in-between. For accommodating all such stringent requirements, ITO films in the present investigation has been deposited on glass substrates using 13.56 MHz RF magnetron sputtering and optimized at temperature close to the melting point of Sn as a dopant to the In2O3 network, in order to utilize its best favorable contribution to the growth of properly doped films having balanced combination of relevant optical, electrical and nano-structural properties. © 2018 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of International Conference on Nanotechnology: Ideas, Innovations & Initiatives-2017 (ICN:3i-2017).
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