Abstract
Gas sensors using metal oxides have several advantageous features such as simplicity in device structure and low cost fabrication. In this work, Tin-doped indium oxide (ITO) films were prepared by the screen printing technique onto glass substrates. The granular and porous structure of screen-printed ITO are suitable for its use in gas sensing devices. The resistance of the ITO films was found to be strongly dependent on working temperatures and the nature and concentration of the ambient gases. We show that screen-printed ITO films have good sensing properties toward NH 3 vapours. The observed behaviors are explained basing on the oxidizing or the reducer nature of the gaseous species that react on the surface of the heated semi-conducting oxide.
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