Abstract
In this paper, we discuss the optimal DC magnetron sputtering deposition conditions needed to obtain low resistivity Molybdenum (Mo) thin films for high-temperature (800 °C) microheater applications. The influence of Ar gas pressure (2–10 mTorr), sputtering power (80–160 W), and annealing temperature (200–1000 °C) on the resistivity and adhesive properties of Mo thin films were investigated. The structural, morphological, and electrical properties of as-deposited and annealed Mo thin films were characterized by X-ray diffraction, Scanning Electron Microscopy, Atomic Force Microscopy, and four-point probe techniques. The thin films deposited at 120 W, 6 mTorr, and annealed at 1000 °C showed low resistivity (18 μΩ-cm) and good adhesive properties. Suspended-membrane microheaters were fabricated using as-deposited and annealed Mo thin films, and their performance characteristics were compared. The impact of thin-film resistivity on power consumption and on the maximum operating temperature of Mo microheater was also investigated.
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