Abstract
We present a systematic characterization of the gain, refractive index, and linewidth enhancement factor in a semiconductor laser and a semiconductor optical amplifier. We compare the refractive index shift and linewidth enhancement factor due to electrical pumping alone and then with electrical and optical pumping. Changes in carrier density are estimated throughout with a many-body optical gain model taking into account the valance-band mixing. The spectral characteristics of the refractive index shift show potentially ideal conditions for broadband cross-phase modulation. Further measurements of the refractive index shift and linewidth enhancement factor in a semiconductor optical amplifier show operating conditions under which the refractive index shift and linewidth enhancement factor change sign, revealing potentially ideal conditions for cross gain modulation.
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