Abstract
Measurements of the optical gain, differential refractive index and linewidth enhancement factor ((alpha) parameter) in 980 nm InGaAs/InGaAsP broad area lasers diodes are presented. Two different experimental configurations for the measurement of the Amplified Spontaneous Emission spectra, both using a spatial filtering technique, are compared. A new procedure for extracting the modal index change in the case of low optical confinement factor laser structures is proposed. We present and discuss the influence of the experimental technique, and of the data processing on the extracted value of the gain and ß parameter as a function of injection level.
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