Abstract
Charge storage in MOS structures with an ion implanted oxide layer has been investigated. The electrons generated by internal photoemission are captured in SiO 2 traps which are created by the implantation of Kr + and N + ions at energies of 50–290 keV and a fluence up to 10 14 cm −2. The charge storage results in a voltage shift of the high frequency C-V-curve. The dependence of electron storage on exposure time has been measured and compared with approximative calculations. The discharge of traps occurs by heating treatment and hints at the existence of deep oxide traps combined with structural lattice defects.
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