Abstract
Optically detected cyclotron resonance (ODCR) in pure-Ge has been observed. Experimental results are (1) hole resonance has been observed stronger at ODCR than at usual cyclotron resonance (CR), (2) effective mass dependence of signal intensity of electron resonance at ODCR is different from one at CR, and (3) both free carrier-exciton and free carrier-exciton-electron hole droplet coexisting systems are not expressed by a single carrier temperature when free carriers are rather hot through microwave absorption. By means of kinetic equations it is shown that the origin of ODCR observation is the impact ionization of excitons by free carriers in the free carrier-exciton coexisting system.
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