Abstract

The second harmonic generation (SHG) in the asymmetric double triangular quantum wells (DTQWs) is investigated theoretically. The dependence of the SHG coefficient on the right-well width of the DTQWs is studied, and the influence of the applied electric field on SHG coefficient is also taken into account. The analytical expression of the SHG coefficient is analyzed by using the compact density-matrix approach and the iterative method. Finally, the numerical calculations are presented for the typical GaAs/Al x Ga 1− x As asymmetric DTQWs. The results show that the calculated SHG coefficient in this coupled system can reach the magnitude of 10 −5 m/V, 1–2 orders of magnitude higher than that in step quantum well, and that in double square quantum wells. Moreover, the SHG coefficient is not a monotonic function of the right-well width, but has complex relationship with it. The calculated results also reveal that an applied electric field has a great influence on the SHG coefficient. Applying an appropriate electric field to a DTQW with a wider right well can induce a sharper peak of the SHG coefficient due to the double-resonant enhancement.

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