Abstract
We have theoretically analyzed the effects of externally applied fields (magnetic and intense laser) as well as various structural parameters such as well width, barrier width, barrier height, and structural asymmetry on the second harmonic generation (SHG) coefficients of GaAs/Al0.3Ga0.7As Harmonic-Gaussian asymmetric double quantum wells (QW). The time-independent Schrödinger equation was solved using the diagonalization method and effective mass approximation to obtain the energy eigenvalues and eigenfunctions of the structure. An expression derived within the compact density matrix approach has been used to evaluate the second harmonic generation (SHG) coefficient. Our numerical results indicate that increasing the magnitude of the magnetic (intense laser) field causes the peak positions of SHG to shift towards higher energy regions/blue (lower energy regions/red). On the other hand, as the structural parameters A1 and A2 ( k and z0 ) increase, the peak positions of the SHG coefficients exhibit a shift towards higher energy regions/blue (lower energy regions/red). We expect that the results of our study will contribute to the development of new optoelectronic devices based on the Harmonic-Gaussian asymmetric double quantum well structure.
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