Abstract
The amorphous to polycrystalline transition in thin silicon layers is accompanied by a large change in optical transmission in the visible. By inducing this transition by laser annealing, high-resolution optical recording and visible-light readout have been demonstrated. As an optical recording material, amorphous silicon layers offer characteristics of high information-storage density, long-term stability, and negligible degradation upon repeated readout. Such an optical image in a thin silicon layer can be converted to a relief pattern by taking advantage of the difference in etch rate between amorphous and polycrystalline silicon, thus providing a method of producing patterns in silicon layers without use of intermediate photo-resist steps.
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