Abstract
Abstract MBE grown GaAs-AlχGa1-χAs superlattice structure is investigated from the view points of crystallography (X-ray diffraction and direct lattice-image observation by TEM), and optical properties (controllability of E , opposite Burstein shift, structure dependent refractive index and room-temperature exciton). New device properties of an MQW laser diode/waveguide are described, which are an anisotropic gain, low absorption loss and stable longitudinal mode oscillation under high-speed modulation. Long wavelength region MQW laser diode is presented which is made from GaSb-AlχGa1-χSb material system. Some future prospects are given.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
