Abstract
Abstract MBE grown GaAs-AlχGa1-χAs superlattice structure is investigated from the view points of crystallography (X-ray diffraction and direct lattice-image observation by TEM), and optical properties (controllability of E , opposite Burstein shift, structure dependent refractive index and room-temperature exciton). New device properties of an MQW laser diode/waveguide are described, which are an anisotropic gain, low absorption loss and stable longitudinal mode oscillation under high-speed modulation. Long wavelength region MQW laser diode is presented which is made from GaSb-AlχGa1-χSb material system. Some future prospects are given.
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