Abstract
The structural dependence of the resonant tunneling characteristic in InGaAs/InAlAs MQW diodes is studied. It is found that the threshold current density for negative differential resistance caused by resonant tunneling effect increases with a decrease in the barrier width, well width and well number. In particular, the threshold current density increases by an order of one and a half when the barrier width decreases from 67 to 50 Å. Bistable operation with quite a high light output on/off ration (800:1) is obtained for the InGaAs/InAlAs MQW laser diodes with 50 Å width barriers using the resonant tunneling effect.
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