Abstract
MBE grown GaAs–AlxGa1−xAs superlattice structure was investigated in terms of crystallography (x‐ray diffraction and direct lattice‐image observation by TEM) and optical properties (controllability of Eg, oppoiste Burstein shift, structure dependent refractive index and room‐temperature exciton). New device properties are described for an MQW laser diode/waveguide. These include anisotropic gain, low absorption loss, and stable longitudinal mode oscillation under high‐speed modulation. An MQW laser diode in the long wavelength region is presented, which is made using the GaSb–AlxGa1−xSb material system. Future prospects are also described.
Published Version
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