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Abstract
We have found with far-infrared (FIR) absorption spectroscopy that prolonged annealing of silicon at 470°C leads to the generation of new FIR absorption bands. They are strongly correlated with a recently observed new type of oxygen-related thermal donor (NTD) which is different from either the so-called thermal donor (TD) or new donor (ND) in nature. It is deduced from the temperature dependence of FIR spectra that NTD is a family of shallow double donors just like TD. However, there is a drastic difference between TD and NTD; TD gives rise to sharp absorption lines, while NTD results in broad absorption bands. The possible origins of such a difference are discussed.
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