Abstract
We performed optical characterisation on high-quality InAlGaN thin films and InAlGaN/GaN quantum wells (QWs) grown by rf-MBE. Our main findings are that the In bowing coefficient in In0.08Al0.29Ga0.63N alloys is found unexpectedly large (bI = 8.4 eV), and that the internal field in In0.08Al0.29Ga0.63N/GaN QWs is strongly reduced (0.25 MV/cm) as a consequence of enhanced polarisation matching between well and barrier layers.
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