Abstract
GaN is one of the most promising semiconductors for optoelectronics in the blue spectral region. The commercialization of bright blue and green light emitting diodes based on group-III nitrides is a milestone in the competition for blue light sources which are important for fabricating full-color displays. The recent first realization of an InGaN multi-quantum-well laser diode yields a great stride of progress in the development of ultraviolet optoelectronic devices. In spite of this recent success in device techniques, some of the basic electrical and optical properties of group-III nitrides are still unknown. Little information exists on compensation and conduction mechanisms in GaN. This is often a problem of the material quality and a lack of better understanding of the epitaxial growth techniques.
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