Abstract
The group-III nitrides are an interesting material system for applications in the blue spectral region and for high-power and high-temperature devices. P-type doping in the metalorganic vapour-phase growth process, however, suffers from the material's high-background donor concentration. Hydrogen passivation furthermore decreases the number of activated acceptors [N.M. Johnson, W. Götz, J. Neugebauer, C.G. van de Walle, Mater. Res. Soc. Symp. Proc. 395 (1996) 723; A. Bosin, V. Fiorentini, Mater. Res. Soc. Symp. Proc. 395 (1996) 503] [1, 2]. Thermal treatment was found to increase the amount of activated acceptors [S.J. Pearton, S. Bendi, K.S. Jones, V. Krishnamoorthy, R.G. Wilson, F. Ren, R.F. Karlicek, R.A. Stall, Appl. Phys. Lett. 69 (1996) 1879; Y. Li, Y. Lu, H. Shen, M. Wraback, C.Y. Hwang, M. Schurman, W. Mayo, T. Salagaj, R.A. Stall, Mater. Res. Soc. Symp. Proc. 395 (1996) 369] [3, 4]. We have investigated the influences of thermal treatment process steps on the electrical and optical properties of Mg-doped single layers and used the results to fabricate AlGaN/GaN heterostructure LED layers. A simple test structure was employed to assess the electro-optical properties of the LED structures.
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