Abstract
We have made a quantitative study about the thermal activation of thermal donors in high resistivity magnetic Czochralski silicon. The thermal donor activation has been performed through a thermal treatment at 430 °C up to a total time of 80 min. The space charge density after each annealing step has been extracted from capacitance–voltage measurements. If the starting material is boron-doped p-type high-resistivity Czochralski silicon, the thermal donor generation process can be utilized in order to produce p +/n −/n + detectors. The last thermal process step, i.e. the sintering of aluminum, is intentionally carried out at the temperature where thermal donors are created. According to our results, we have improved the previously reported model of the thermal donor generation.
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