Abstract
Annealing was found to effuse hydrogen from the lattice, hence, activating the passivated Mg-acceptors to yield p-type conductivity. We investigated the optical and electrical properties of GaN doped over a wide range of Mg-concentrations and growth-conditions before and after annealing. In low temperature photoluminescence we observed acceptor bound excitons and donor–acceptor pair recombinations (DAP) whose relative intensities depend on the doping level. At high doping levels we observe a broad blue luminescence band which we associate with a DAP involving deep donors introduced by the high concentration of Mg. Van der Pauw room-temperature Hall measurements of selected samples yield hole concentrations of up to 7×10 17 cm −3. Furthermore, a significant influence of the deposition temperature and the V/III-ratio on the percentage of ionizable Mg-acceptors is found. Hydrogen as carrier gas is judged superior to nitrogen with respect to layer morphology and doping properties.
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