Abstract
AbstractTwo methods have been used to calculate the ε2‐spectra of amorphous IV‐IV and III‐V semiconductors: The “Complex‐band structure” (CBS‐)method and the “non‐direct transition” (NDT‐)method including energy dependent matrix elements. Both methods start with the calculation of the electronic properties of the corresponding crystals. Results for amorphous Ge, Si, GaP, GaAs, GaSb, InP, InAs, and InSb are compared with experimental ε2‐spectra.
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