Abstract
The results of optical absorption and dc electrical conductivity measurements on flash-evaporated amorphous III-V compounds are analyzed in terms of defects. From a comparison of stoichiometric amorphous GaAs and GaP, it is concluded that amorphous GaP contains defects related to the presence of wrong bonds, besides dangling-bond-type defects which are common to both compounds. Effects associated with large deviations from stoichiometry (Sb excess) in amorphous GaSb are also considered.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
