Abstract
The distribution of damage in Si-implanted GaAs has been studied using differential reflectance (DR) spectroscopy. This novel and relatively simple optical technique has high sensitivity and allows the study of damage distribution in a dose range of 1*1011-3*1014 cm-2, which is difficult to access by other techniques. The effects of substrate temperature (30-300 degrees C) and crystal orientation ((100), (110) and (111) directions) on the damage profiles have also been measured. As expected, the overall damage was found to increase with increasing ion dose and to decrease with increasing temperature. The measured damage profiles, obtained by successively etching the sample and measuring the DR signal, have been compared with TRIM simulations. The magnitude and shape of the damage profiles were found to be very sensitive to crystal orientation.
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