Abstract
Epitaxial growth process of GaAs by molecular beam epitaxy and migration-enhanced epitaxy is investigated using a newly developed optical monitoring method called surface photo-absorption. This method is based on the reflectivity measurement of p-polarized light incident at the Brewster angle on the growing surface. This configuration minimizes the bulk GaAs contribution to the light reflection. The small signal from the growing surface is thus detected with a high signal-to-noise ratio. It was found that this optical method is useful for monitoring the surface chemical composition during molecular beam epitaxy, and the fractional layer growth during migration-enhanced epitaxy. An optimization of As 4 deposition rate during growth is also demonstrated using the recorded surface photo-absorption signal.
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