Abstract
The self-organized In 0.25Ga 0.75As quantum dots (QDs) were grown by conventional molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) at 500°C. The dot initiation by MEE was much earlier than that by MBE due to the enhanced atomic migration. However, atomic-force microscopy showed that the mean base length and height are almost the same for the 60 ML dots grown both by MEE and MBE. For the MBE growth the atoms in the wetting layer migrate and participate in forming the dots after the dot's initiation to reduce the strain-energy accumulated in the wetting layer before the dot's initiation. From the size of the dots with 30 and 60 ML deposition thickness, it is realized that there is a critical thickness over which further deposition will not only enlarge the dots but also thicken the wetting layer. The photoluminescence intensity of QDs grown by MEE is more than an order of magnitude higher than that of QDs grown by MBE. It indicates that some types of defects were produced during the process of the dots growth by MBE.
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