Optical gain characteristics in Al-rich AlGaN/AlN quantum wells

Abstract

The optical gain characteristics of Al-rich AlGaN/AlN quantum wells (QWs) were assessed by the variable stripe length method at room temperature. An Al0.79Ga0.21N/AlN QW with a well width of 5 nm had a large optical gain of 140 cm−1. Increasing the excitation length induced a redshift due to the gain consumption and the consequent saturation of the amplified spontaneous emission. Moreover, a change in the dominant gain polarization with Al composition, which was attributed to switching of the valence band ordering of strained AlGaN/AlN QWs at Al compositions of ∼0.8, was experimentally demonstrated.