Abstract
Controlling the resistive switching parameters by using external fields is of great importance in the application of the resistive memory devices. In this work, we investigate the effect of light illumination and oxygen atmosphere on the resistive switching of the anatase phase polycrystalline TiO2 thin film using the in-situ conductive atomic force microscopy and Kelvin probe force microscopy. A forming free bipolar resistive switching effect with ON/OFF ratio over 104 was achieved in nanoscale uniformly on the film. The conduction characteristics can be changed from the non-rectifying behavior in vacuum to the Schottky rectifying behavior in oxygen gas with nearly the same ON/OFF ratio. The reversible surface potential shift accompanied by the resistance switching was also observed. Furthermore, the resistance states and the surface potential contrast can be erased by 395 nm near-UV illumination, demonstrating a good optical erasing performance of the device. Combining the surface potential shift and the response to the illumination and oxygen gas, a charge trapping/detrapping mechanism was confirmed to account for the observed switching behavior. These results provide a new way to fabricate the controllable and optical erasable resistive switching devices in nanoscale.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call