Optical and structural characterizations of NiO-doped PMMA films and fabrication of Ag/NiO-doped PMMA/n-Si/AuSb for analogue-digital switching applications

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Herein, the authors report the NiO-doped PMMA nanocomposites fabrication process with different Ni concentrations of 0.001–10 wt% on pre-cleaned glass, ITO, and n-type Si via spin-coating technique. X-ray diffraction (XRD) was used to analyze the crystal structure of NiO in powder form and the NiO-doped PMMA nanocomposite thin films. The Rietveld refinement method was used to analyze the manufactured NiO's powder-form structural characteristics. The analysis data revealed a single phase of NiO nanoparticles with face-centred cubic of Fm-3m space group. The average crystallites' mean size and the microstrain value were determined based on the Williamson-Hall model and were equal to 32.47 ± 1.210 nm and 5 × 10−5, respectively. The FESEM micrographs illustrate dispersed cubic-shaped NiO grains in the PMMA matrix. The estimated energy gaps and the width of the localized energy states (Urbach tails) are plotted against the photon energy. The estimated energy gap, EgOp is increasing from 3.649 ± 0.003 eV to 3.782 ± 0.005 eV with increasing the NiO nanoparticles' doping ratio in the PMMA as a host insulating polymer. The fabricated Ag/NiO-PMMA (S4)/n-Si/AuSb heterojunction device revealed two different (HRS and LRS) resistance-switching behaviours. For second and third electrical (I–V) paths, the extracted magnitudes of the ideality factor are 2.397 ± 0.006 and 2.691 ± 0.003 and the calculated barrier height are 0.727 ± 0.004 and 0.886 ± 0.005, respectively. The interfacial electronics states NSS increasing from 6.58 × 1012 to 3.7 × 1014 cm−2.eV−1 and 3.48 × 1013 to 3.65 × 1014 cm−2 .eV−1 for the 2nd HRS path and 3rd LRS, respectively. The investigated hysteresis loop and the variation in interfacial electronics states reveal that the NiO-PMMA nanocomposite may be promising in non-volatile memory and electrical switching electronic devices.