Optical and structural characterization of Mg xZn 1− xS mixed films grown by low-pressure MOCVD

Abstract

Mg x Zn 1− x S mixed films have been grown on (1 0 0)-oriented GaAs substrates by low-pressure metalorganic chemical vapor deposition. In the range of Mg composition ( x) up to about 0.4, the mixed crystals were grown only in the zincblende phase. The 4.2 K photoluminescence spectrum in the crystal with x Mg =0.39 was dominated by the strong ultraviolet emission around 300 nm. The growth of Cd y Zn 1− y S/ZnS/Mg x Zn 1− x S separate confinement heterostructures (SCHs) was performed and ultraviolet emission at about 340 nm from a Cd 0.23Zn 0.77S well layer in SCH was observed at RT for the first time.