Abstract
Two-step growth method was used to grow high-quality ZnO thin film on polycrystalline diamond/Si with (001) orientation by low-pressure metal-organic chemical vapour deposition. X-ray diffraction spectra and photoluminescence (PL) spectra clearly showed that the quality of ZnO film was improved by two-step growth method. Strong ultravioletemission was observed while deep level emission could be hardly observed in room-temperature PL spectrum of ZnO thin film grown by two-step method. Emission from excitons bound to donors was observed in 100 K PL spectrum.
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