Effect of epilayer's growth temperature on crystalline quality of InAs 0.6P 0.4/InP grown by two-step growth method

Abstract

InAs 0.6P 0.4 epilayers grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP (1 0 0) substrates were investigated. A two-step growth method, in which low-temperature (450 °C) InAs 0.6P 0.4 buffer layers were introduced into the structure, was employed to relax the mismatch between the InAs 0.6P 0.4 and InP substrate. The effect of epilayer's growth temperature on crystalline quality of InAs 0.6P 0.4 epilayer was studied by X-ray diffraction, scanning electron microscopy, Hall measurements, and photoluminescence spectrum. The characterization results showed that the growth temperature is an important factor for obtaining good quality and property of InAs 0.6P 0.4 epilayers and 530 °C is the optimum epilayer's growth temperature in our experimental conditions.