Abstract
Swift heavy ion irradiation is a unique technique for material modification as it deposits massive energy in the selected area of samples. Swift heavy ion irradiation causes structural, linear and nonlinear optical changes in Selenium based amorphous thin films. The electronic energy loss (Se) of ions within the thin film sample is the key factor in changing the optical and structural properties of the sample. In present review work, a parabolic relationship is observed between the mean coordination number (r) and log10(Se). The present systematic investigation on Selenium based amorphous chalcogenides will be helpful to design optical and optoelectronics components.
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