Abstract
This article reviews modeling approaches for optical and extreme ultraviolet (EUV) projection lithography. It explains the models for the rigorous computation of light diffraction from lithographic masks, a vector formulation of image formation in projection scanners and models for chemical amplified resists (CAR). Several examples demonstrate the application of these models and related computation techniques. It is shown how computational lithography supports innovative optics and material-driven resolution enhancement solutions but also how it helps to comprehend and master the lithographic process.
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