Abstract
A tight-binding models which account for band mixing, strain and external applied potentials in a self-consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. This model can be applied to direct and indirect gap semiconductors thus allowing for instance the self-consistent calculation of band profile and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs.
Highlights
Electronic and optical properties of semiconductor nanostructures based on homo- and heterojunctions have been investigated theoretically by means of a variety of tools
These range from abinitio approaches [1], which are very precise but require a large computational effort and are limited only to very small nanostructures, to approximate but easy-to-handle and fast methods such as for example those based on the envelope function approximation (EFA) [2]
The empirical tight binding method (TB) [5,6,7,8] has been shown to be a valid alternative to EFA, since it improves the physical content in the description of the nanostructure with respect to EFA without requiring a much higher computational effort
Summary
INFM-Dipartimento di Ingegneria Elettronica, Universith di Roma "Tor Vergata" 00133 Roma, Italy. A tight-binding models which account for band mixing, strain and external applied potentials in a self-consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. This model can be applied to direct and indirect gap semiconductors allowing for instance the self-consistent calculation of band profile and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs
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