Abstract
Samples of thin (Gd–In) oxide film were prepared on quartz and Si(P) substrates for optical and electrical investigations. These samples were annealed at different conditions and characterised by UV–Vis absorption spectroscopy, X-ray fluorescence (XRF) and X-ray diffraction (XRD). The AC-conductance and capacitance were studied as a function of frequency, temperature, and gate voltage. The ‘corrected barrier hopping’ CBH model controls the frequency dependence of the conductivity and capacitance. Good oxide-Si interface properties due to low midgap interface state density was observed for (Gd–In) oxide sample annealed in vacuum.
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