Abstract
Samples of Er-doped Gd-oxide thin films were prepared on quartz and Si(p) substrates for optical and electrical investigations. These samples were annealed at different conditions and characterised by UV-VIS absorption spectroscopy, X-ray fluorescence, and X-ray diffraction. The constructed metal–oxide–semiconductor (MOS) devices were characterised by measuring their capacitance and ac conductance as a function of gate voltage. The ac conductance of the MOS devices was studied as a function of frequency in the range 500 Hz to 100 kHz. It was found that the corrected barrier hopping model controls experimental results and the parameters of the model were determined.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
