Abstract
The calculation of the absorption coefficient of a direct gap semiconductor in the presence of a high density of impurities is considered, in the absence and presence of an electric field. A two-band model is used and the absorption coefficient is calculated directly from the Kubo equation in the one-electron approximation. The method uses essentially a semiclassical approximation and calculates the two-particle propagator. Typical results are given for p-type GaAs and are found to agree reasonably with experiments.
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