Abstract

The static and dynamic performance of 600 V, n- and p-channel, vertical insulated-gate bipolar transistors (IGBTs) at temperatures as low as 77 K has been measured and analyzed. Both types of IGBTs demonstrate a better performance at low temperatures in turn-off times and maximum gate controllable current, at the expense of a slightly higher forward drop. >

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.