Abstract
To obtain IGBT (insulated gate bipolar transistor) integrated large current power ICs which are more compact and reliable, a DI (dielectric isolation) application technology using a VIGBT (vertical IGBT) has been studied. As a result, an IC of the 600 V, 25 A class, presently the largest power rating of power ICs, has been achieved. The IGBT properties can be made identical to those of the discrete IGBT despite inherent restrictions of IC output devices. The IC also includes the control circuits. This DI method is known as a VLCS (vertical lateral composite structure) and is capable of integrating a large current vertical device. This method eliminates the latch-up problem of IGBTs using the junction isolation method. >
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