Abstract
Several vertical insulated gate bipolar transistor (IGBT) electrothermal models are currently available on circuit simulators. However, no reliable electrothermal models have been proposed for the lateral IGBT (LIGBT). In this paper, for the first time, an electrothermal model for an LIGBT structure based on a novel concept recently reported by Udrea (IEDM, p. 451, 2004), and here termed silicon-on-membrane, is presented. The model relies on a systematic study of both the isothermal and self-heating behaviors of the device. The model is further implemented in the SPICE circuit simulator language and validated against extensive Medici numerical simulations and experimental data
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
