Abstract
Open circuit voltage decay measurements have been made from high injection levels on a Si P + N diode whose base width is comparable to a diffusion length; the diode was first provided with an N + base contact and then with an R contact. As compared to the P + NN + structure wherein carrier decay occurs mainly through recombination, the P + NR structure exhibits a considerably faster voltage decay due to enhanced carrier diffusion effects. Based on the values of carrier lifetime obtained from the P + NN + data, the P + NR data are compared to the predictions of a theory which is valid for arbitrary base widths and takes into account carrier diffusion and the Dember voltage which becomes significant for sufficiently high resistivity material at high injection levels. The agreement between theory and experiment is reasonable and extends over some five orders of magnitude of injection levels.
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