Abstract
This paper proposes a junction temperature estimation method for power devices such as Insulated Gate Bipolar Transistor (IGBT) using the characteristics of on-state voltage, on-current and junction temperature. In the proposed method, the junction temperature is estimated during the inverter operation without the loss calculation. In addition, the IGBT module with deterioration is estimated by the equivalent resistance among the wire bonds and the emitter metallization in order to reduce the estimation error of the junction temperature. Moreover, the experimental results show that the estimation of the junction temperature is confirmed during the inverter operation. Moreover, the estimation error of the junction temperature is reduced by the proposed estimation method.
Published Version
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