Abstract
On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.
Highlights
A Method to Monitor insulated gate bipolar transistor (IGBT) Module Bond WireQingyi Kong 1 , Mingxing Du 1, * , Ziwei Ouyang 1,2 , Kexin Wei 1 and William Gerard Hurley 1,3
In recent years, power electronic systems have been widely used in various fields that require high stability, e.g., wind power [1,2], electric vehicles [3,4], ship manufacturing [5], and aerospace engineering [6]
Vce-th and Von-chip, which remained constant throughout the insulated gate bipolar transistor (IGBT) module bond wire aging process, and Vpackage which is the dependent variable in the process of bond wire aging
Summary
Qingyi Kong 1 , Mingxing Du 1, * , Ziwei Ouyang 1,2 , Kexin Wei 1 and William Gerard Hurley 1,3.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
