Abstract
Fabrication of organic thin-film transistors (OTFTs) via high throughput solution process routes have attracted extensive attention. Herein, we report a simple one-step coating method for vertical phase separation of the poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly(methyl methacrylate) (PMMA) blends as semiconducting and dielectric layers in OTFTs. These OTFTs can be used as phototransistors for ultraviolet (UV) light detection, where the phototransistors exhibited great photosensitivity of 597.6 mA/W and detectivity of 4.25 × 1010 Jones under 1 mW/cm2 UV light intensity. Studies of the electrical properties in these phototransistors suggested that optimized P3HT contents in the blend film can facilitate the improvement of film morphology, and therefore form optimized vertical phase separation of the PMMA and P3HT. These results indicate that the simple one-step fabrication method creates possibilities for realizing high throughput phototransistors with great photosensitivity.
Highlights
Photodetectors have attracted extensive attention due to their potential applications in intelligent fields such as sensors, optical communications, military security, displays, imaging, and biomedical instruments [1,2,3,4,5,6,7]
Investigations of phototransistors have mainly focused on the device structure design, fabrication process optimization, and material synthesis and selection, where the basic organic thin-film transistors (OTFTs) platforms are based on multiple layer structures [13,14,15,16]
We investigated the influence of P3HT contents on the phototransistor performance and explored the underlying mechanism, which contributes to developing high performance phototransistors via vertical phase separation
Summary
Photodetectors have attracted extensive attention due to their potential applications in intelligent fields such as sensors, optical communications, military security, displays, imaging, and biomedical instruments [1,2,3,4,5,6,7]. For regulation of the semiconductors’ crystallinity during the phase separation process, ultra-thin flexible OTFT devices and high-performance gas sensors were realized by poly(3-hexylthiophene-2,5-diyl) (P3HT):poly(methyl methacrylate) (PMMA) blend films [25,26,27,28]. These existing works have indicated that ideal vertical phase separation between insulating polymers and organic semiconductors may happen during the coating process and provide a new simple route for a one step process for both dielectrics and semiconductors. We investigated the influence of P3HT contents on the phototransistor performance and explored the underlying mechanism, which contributes to developing high performance phototransistors via vertical phase separation
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