Abstract
Halide perovskites have attracted a great deal of attention due to their remarkable performances in solar cells, photodetectors, lasers, light emitting diodes, and memories. However, the issue of low quality of the halide perovskite films still restricts their potential applications. Here, the all-inorganic perovskite CsPbBr3 films prepared by the one-step solution deposition method are adopted as the switching layer to fabricate the flexible resistive switching (RS) memory devices. The devices exhibit a typical bipolar RS behavior including long data retention, high ON/OFF ratio, and good cycling endurance under bending, indicating that the one-step solution deposited CsPbBr3 films are promising candidates for the RS memory devices. In addition, by controlling the compliance current and applied stop voltage, the flexible RS devices demonstrate the multilevel storage capability. This work opens up the opportunity for future flexible, high performance, and multibit storage capability RS devices based on all-inorganic perovskite CsPbBr3 films.
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