Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

Abstract

AbstractAll‐inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic–inorganic hybrid halide perovskites. RS memory devices utilizing air‐stable all‐inorganic halide perovskite cesium lead bromide (CsPbBr3) film as the switching layer, which are successfully prepared by spin coating at low temperature, are demonstrated. Memory devices based on CsPbBr3 film exhibit typical reproducible bipolar RS behavior and superior switching characteristics, including the high ON/OFF ratio (≈104), long data retention (>5 × 104 s), and environmental stability. In addition, multilevel storage capability can be achieved through controlling the different compliance currents. The formation and rupture of bromine (Br) vacancy conducting filaments (CFs) is proposed to explain the switching behavior in the Pt‐anode‐based memory devices, which is verified by XPS depth‐profiling analysis. Moreover, the coexistence of Br vacancies and Ag metallic CFs is suggested to be responsible for the switching behavior in Ag‐anode based device. These results demonstrate that the all‐inorganic halide perovskite CsPbBr3 film will be the promising switching material for nonvolatile memory devices.