Abstract
Expressions for the flat-band voltage V FB and threshold voltage V T for MOS devices with polysilicon gate and nonuniformly doped substrate are given. The role of metal-semiconductor contacts and the assumptions involved in the analysis are discussed. Both V FB and V T have three extra terms over the conventional expressions, two terms result from nonuniform doping and one is due to a voltage drop in the gate produced by space charge. Contrasts are made to devices with metal gates and uniformly doped substrates. The commonly used expression for mobile channel charge in terms of gate voltage is clarified.
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